Single-site gallium centers on the surface of silica are prepared grafting

Single-site gallium centers on the surface of silica are prepared grafting of [Ga(OSi(Ografting of tailored molecular precursors on supports with isolated COH sites. of 3.15 ? (= 3) was also employed for modeling of the GS-9256 supplier 2nd shell. An additional multi-scattering route for GaCOCSi of 3.25 ? (= 6) and an extended scattering route… Continue reading Single-site gallium centers on the surface of silica are prepared grafting